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It is common practice in the manufacture of semiconductor devices to utilize “wet” chemical processing techniques which use corrosive solutions containing various reagents. Such wet processing involves the use of hazardous chemicals, and as a consequence the environment in which such wet processing is carried out is highly controlled.
Since semiconductor device technology is growing rapidly, it is anticipated that there will be a shortage of semiconductor manufacturing facilities having the necessary equipment and the facilities to control hazardous chemicals and utilize hazardous chemicals.
Many potentially valuable compounds, particularly gases, are difficult to use in wet chemical processing because of their reactive nature. One of these, oxygen, is needed to convert the halides of gallium, aluminum, etc., to their elemental state.
In view of the need for a safe and inexpensive method for selectively adsorbing oxygen from a gaseous mixture of gases, it is an object of this invention to provide such a method.
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